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We report investigation of electron traps in AlGaN/GaN HEMTs, grown on silicon by molecular beam epitaxy. Deep levels analysis was performed by conductance deep level transient spectroscopy (CDLTS) under a drain pulse. CDLTS measurements reveal three traps with the energy levels of 0.11, 0.17 and 0.22 eV.
InxAl1-xN nanocolumns (0.71lesxInles1.00) were fabricated on Si (111) substrates by RF-MBE. The room temperature photoluminescence (RT-PL) in optical communication wavelengths from 0.95 to 1.94 mum with changing xIn was observed. InN/InAlN heterostructures were also fabricated.
AlGaN/GaN heterostructure field effect transistors (HFETs) fabricated from maskless selectively grown mesas by ammonia molecular beam epitaxy on Si(111) substrates are demonstrated. With 0.8 mum gate length, the devices exhibited maximum drain current and trans- conductance of 425 niA/mm and 140 mS/mm, respectively. Values of fT and fMAX of 8 and 19 GHz, respectively, were obtained from RF measurements...
This article reports the use of plasma-assisted molecular beam epitaxy (MBE) to grow InGaN/GaN/AIN on Si (111) substrate. The film is then characterized by high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). The studies show that the structural quality of the film is comparative to the values reported in the literature. PL measurement exhibits a sharp and intense band edge emission...
Epitaxial growth of beryllium telluride BeTe and Zn0.06Be0.94Te by MBE on silicon was investigated as an approach towards multijunction solar cells. The good crystal properties, optical transparency, thermal stability and high p-type doping levels are positive attributes for a buffer layer for further growth of top solar cell junctions. AlGaAs-GaAs quantum well junctions were grown with close lattice...
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