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In this work, a simple way of growing high quality ZnO nanowire on PS substrate by thermal evaporation technique without application of catalyst is discussed. The PS was generated by electrochemical anodization method using n-type Si (lOO)wafer. During electrochemical etching process, constant current density, J=25 m/cm has been applied in the electrolyte consisting of aqueous Hydro-fluoride acid,...
Large-area vertically aligned silicon nanowire arrays have been successfully fabricated on Si substrate by templated catalytic etching process with controlled length and density. The formation of silicon nanowire arrays from anodic electrochemical etching of silicon by silver catalysts. The length of nanowire is defined by the duration of the etching process. This approach was also used to prepare...
Self-assembled Si nanowires (SiNWs) have been synthesized and characterized as a template for surface metal silicide formation to investigate electron transport at the nanowire surface. Silicon nanowires were directly grown on silicon substrates via the solid-liquid-solid (SLS) growth process. Preliminary synthesis utilized high-temperature processing of a sputtered Au catalyst film on Si (100) and...
Well aligned Si nanowires (SiNWs) by Vapor-Liquid-Solid growth process are presented. Instead of using H2, the current work uses N2 as carrier gas. The growth conditions of SiNWs are controlled by the ratio of nitrogen versus silane gas. Tapering of nanowires was found at T=620degC and P=333 m torr, and the tapering parameter was reduced by increasing the N2 gas. Tapering of nanowires is attributed...
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