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Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide band gap. Semiconductor electronic devices and circuits made from SiC are presently being developed for high-temperature, high-power, and high-radiation conditions in which conventional semiconductors can not adequately perform. In this study, 3C-SiC micro-pillar arrays were fabricated on Si substrate by chemical vapor deposition...
Arrays of silicon nanowire/multiwalled carbon nanotube nanocomposite have been synthesized by wet etching through electroless metal deposition and chemical vapor deposition. Vertically aligned Si nanowire arrays with controlled diameter and length were fabricated by Ag nanodendrite-assisted wet chemical etching of n-type or p-type silicon wafers using HF/AgNO3 solution. The composite structure was...
Solar cells based on arrays of CVD-grown Si nano- or micro-wires have attracted interest as potentially low-cost alternatives to conventional wafer-based Si photovoltaics [1-6], and single-wire solar cells have been reported with efficiencies of up to 3.4% [7]. We recently presented device physics simulations which predicted efficiencies exceeding 17%, based on experimentally observed diffusion lengths...
Vertically oriented Si nanorods (SiNRs) grown on different substrates were successfully obtained by hot wire chemical vapor deposition (HWCVD) with the glancing angle incident silane flux. The organic-inorganic hybrid solar cells were fabricated by spin coating 3-hexylthiophene (P3HT) into the SiNRs array with the average length of ~200 nm and average separation of ~10 nm. The P3HT shows well penetration...
We have proposed batch fabrication of silicon pyramids with upward CNTs on the tips at one time by a chemical vapor deposition (CVD) process. To synthesize upward CNTs on the pyramid tips, an upward electric field was applied to the silicon pyramid array during the CVD process. By electric field simulation and verifying experiment on silicon one-dimensional array structures, we found that CNTs tended...
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