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Wide band gap devices offer significant advantages such as high power density, fast switching and high efficiency. It is important to understand the trade-off involved in switching loss, conduction loss and reverse conduction characteristics for power converter design. Switching characterisation is essential for understanding the behaviour of new enhancement mode Gallium Nitride (GaN) power transistors...
With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. This paper investigates the influence of the gate drive on the switching characteristics of the device and design strategies highlighted.
This paper presents an experimental parametric study of the parasitic inductance influence on MOSFET switching waveforms. The three most critical stray inductances, namely the gate-loop, switching-loop, and common-source inductances have all been studied and compared in terms of their effect on waveform ringing, switching loss, device stress, and electromagnetic interference. Based on the results...
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