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The aim of this paper is to evaluate experimentally the switching characteristics of discrete high voltage Super-Junction (SJ) MOSFET in the 650VDSS voltage class with respect to device package. The switching performance of the SJ MOSFET is evaluated in four different SMD packages, of which two with Kelvin source, each with respect to a soft recovery freewheeling diode, its own intrinsic body diode...
A 1200 V SiC MOSFET switches at much faster rate compared to a Si IGBT. As a consequence, SiC MOSFET experiences comparatively more ringing in device voltage and current due to the presence of parasitic inductance in the converter layout. Therefore, it is not straightforward to retrofit SiC MOSFETs in the converter layout of IGBTs where parasitic inductance appears in the range of 100 nH to 300 nH...
This paper presents an experimental parametric study of the parasitic inductance influence on MOSFET switching waveforms. The three most critical stray inductances, namely the gate-loop, switching-loop, and common-source inductances have all been studied and compared in terms of their effect on waveform ringing, switching loss, device stress, and electromagnetic interference. Based on the results...
A review of switching loss mechanisms for synchronous buck voltage regulators is presented. Following the review, a new simple analytical switching loss model is proposed for voltage regulators with current source drive. The model includes the impact of common source inductance and parasitic inductance on switching loss. It uses simple equations to calculate the rise and fall times and piecewise linear...
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