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Silicon carbide bipolar junction transistors (SiC-BJT) are promising power semiconductor devices for high efficient motor drive inverters. Especially with the very low on-state voltage drop and high switching speed it challenges the state of the art device - the silicon IGBT. The main disadvantage is the high driver loss in on-state compared to its voltage driven competitors, though. With the one-step...
A novel single-switch power module has been developed, featuring a laminated blade connector for low inductance interconnect to a busbar. The module was designed, optimized and experimentally validated as part of a high frequency three-phase converter, demonstrating parasitic inductances of less than one nano henry for the module and as low as five nano henries for the converter phase-leg commutation...
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