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Power density increase is one of the challenges of Wind Power Converters and the use of Silicon Carbide semiconductors is a promising solution due to the enhanced performance in terms of switching behaviour. This is demonstrated on an existing Wind Power Converter with a hybrid module of SiC based Diode and Silicon IGBT.
Due to wider band gap of silicon carbide (SiC) compared to silicon (Si), MOSFET made in SiC has considerably lower drift region resistance, which is a significant resistive component in high-voltage power devices. With low on-state resistance and its inherently low switching loss, SiC MOSFETs can offer much improved efficiency and compact size for the converter compared to those using Si devices....
This paper presents a design procedure for a full-bridge converter with IGBT transistors loaded with serial resonant circuit. The main concern was the reduction of the switching losses in order to increase converter efficiency and power density. One of the basic applications of this topology with serial resonant load is with the induction heating converters. Theoretical analysis of the switching power...
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