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We study theoretically the influence of external hydrostatic pressure on the valence band structure in [0001]-oriented Al_{x}Ga_{1-x}N/AlN quantum wells used in deep-ultraviolet light emitting devices. The calculations performed using the multi-band k·p method with excitonic effects show that for Al_{x}Ga_{1-x}N/AlN quantum wells with x = 0.7 and quantum well width of 1.5 nm, reordering of the topmost...
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