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GaN-based light-emitting diodes (LEDs) grown on sapphire substrates are integrated with Si by fusion bonding technique. GaN-based LEDs coated with Sn/Au are joined to Si coated with Ti/Au at 300degC in a flowing nitrogen ambient for 30 min. Sapphire substrates are separated from the samples by laser lift-off (LLO) forming GaN-based LEDs/Sn/Au/Ti/Au/Si structures. Microscopy image, observed from the...
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