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40μm silver-silver indium (Ag-AgIn) flip-chip interconnect process at 180°C by transient liquid phase (TLP) bonding process is reported. Array of 50×50 flip-chip joints with 100μm pitch and 40μm joint diameter was fabricated on silicon (Si) and bonded to copper (Cu) substrate at 180°C for 5 minutes with a static pressure of 0.4–0.7MPa (60–100psi). The corresponding load for each joint is 0.05gm. In...
A flip-chip interconnect process at 180 using the silver–indium (Ag–In) binary system is reported. An array of 5050 flip-chip joints with 100 pitch and 40 joint diameter was fabricated. Each joint has the column structure of that connects the silicon (Si) chip to the copper (Cu) substrate. The joint...
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