The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, we present our work on devices fabricated using CdTe films deposited by close-spaced sublimation using substrate temperatures in the range of 450° to 620°C. We studied devices prepared on Saint-Gobain soda lime SGG Diamant and Corning 7059 borosilicate glass substrates. We used four types of contact: SnO2:F, ITO, CTO, and Saint-Gobain AZO with and without high-resistivity buffer layers...
A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
Since the very beginning of the flash memory era, the market has been dominated by the floating gate technology. However, as floating gate flash continues along a very steep scaling path, more and more barriers start to appear, limiting further scaling possibilities of the technology. At the same time, other concepts are preparing to take over. This paper concentrates on the prospect of high-k materials...
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
The dependence of the magnetic properties of multilayer CoNbZr/AlN films on the conditions of film preparation was investigated. AlN films were prepared by N2 reactive sputtering deposition on CoNbZr films. The soft magnetic properties of the as-deposited films were found to be strongly related to the rf input power during AlN deposition. The anisotropy field decreases drastically at an input power...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.