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Using a dedicated test vehicle (low-k planar capacitor) for studying the intrinsic properties of low-k materials and using standard single damascene 50 and 90 nm ½pitch test vehicles, differences in reliability behavior between intrinsic and integrated SiOCH porous low-k materials were investigated. The studied parameters were leakage current, breakdown field, distributional shape of failure times...
Extensive breakdown measurements with large statistic confirm that the TDDB failure distribution follows Poisson area scaling. However, towards larger areas and lower failure percentiles the distribution changes in ways similar to those reported for progressive breakdown in poly Si/SiON gate stacks. The change in failure distribution is found to be more pronounced for nFET than for pFET devices. In...
Stress induced leakage current (SILC) has been observed on non-optimized high-K (HK) and metal-gate (MG) transistors. Large NMOS PBTI degradation and correlation to SILC increase on such gate stack is a result of large trap generations in the bulk-HK. This poses a long term reliability concern on product standby power and can limit the operating voltage if not suppressed. On an optimized HK+MG process,...
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