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The electrical characteristics and reliability of HfO2-based p-GaAs metal-oxide-semiconductor (MOS) capacitors (EOT: 2.4 nm to 4.8 nm) with a thin Silicon (Si) interfacial passivation layer (IPL) have been investigated with different thicknesses of HfO2. SILC generation kinetics and flat band instability were investigated via CVS and CCS measurements. In addition, breakdown voltages of gate oxide...
We performed gate ramp voltage stress on III-V InGaAs based MOSFETs. Stress induces trapped charge and it also leads to interface trap generation, which has detrimental effects on the subthreshold slope and on the transconductance. At high electric fields, before the hard breakdown, a very low-frequency high-current random telegraph noise appears at the gate, which seems to be not correlated with...
In this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure for GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer are used to realize high efficiency and...
Bypass diodes are attached electrically parallel (but with opposite polarity) to solar cells such that when the cells are reverse biased, the bypass diodes are forward biased, passing current and preventing the cells from going into reverse breakdown. For III-V single and multi-junction space cells, discrete silicon bypass diodes have typically been used. In this paper, we present a monolithic bypass...
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