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The following topics are dealt with: diodes; IGBT; GaN devices;SiC devices; superjunction devices; wide bandgap power devices; packaging; power MOSFET; reliability; LV power IC; HV power IC; gate drivers and digital isolators.
This paper shows a practical approach to GaN-based HEMT self-consistent electro-thermal simulation for circuit modeling and reliability estimation. A physical-level lumped element dynamic thermal network able to describe the 2-D device geometry is self-consistently coupled with a novel electro-thermal compact large-signal model. The results obtained with the lumped-element thermal network are compared...
We discuss the many factors affecting the reliability of GaAs HBTs that we have encountered starting from the early days of AlGaAs-emitter HBTs through the present day use of InGaP-emitter HBTs. We discuss both wearout and infancy failure modes and try to distinguish fundamental (i.e., unavoidable) from nonfundamental failure modes. We have found that infant failures are dominated by substrate dislocation...
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