The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents a design of RF MEMS contact switch with high isolation, low insertion loss, small chip area and low power consumption. The switch is fabricated by standard 1P6M 0.18μm CMOS process from TSMC which is compatible with CMOS process. A dc-bias voltage is applied between the cantilever beam and bottom electrode. The switch is actuated by electrostatic force that drove the tail of the...
This paper presents analysis on parameters required for the fabrication process of RF MEMS switches. Stress analysis on gold thin film and variation of stress with different deposition conditions has been studied. Adhesion issues which occurred during the fabrication have also been high lighted. While fabricating the RF MEMS switch the suspended cantilever beam or membrane can touch the lower actuation...
In this work, these complexities are resolved successfully and the monolithic integration of MEMS with a band-reject UWB antenna is achieved using standard cleanroom photolithography procedures. The MEMS-reconfigurable UWB antenna that is proposed, is fabricated and measured, and results are presented. What distinguishes this work from others is the utilized materials and substrate (low-cost SiO2...
This work presents a novel failure analysis technique for the dielectric charging phenomenon in electrostatically driven MEMS devices. The new reliability assessment methodology makes use of Kelvin Probe Force Microscopy (KPFM) and it targets in this specific work thin PECVD silicon nitride films for electrostatic capacitive RF MEMS switches. The proposed technique took advantage of the AFM tip to...
The dielectric charging in RF MEMS capacitive switches is modeled. The modeling focus on charge injections processes and the calculations start from first principles. The calculations were performed on materials with uniform and exponential distribution of defects. The time and bias dependence of distribution of injected charges are derived. The dielectric charging/polarization build-up is derived...
This paper deals with dielectric charging phenomenon - a key failure mechanism for electrostatically actuated MEMS. Conduction mechanisms and trap properties of silicon nitride are investigated by current-voltage measurements on Metal-Insulator-Metal (MIM) capacitors and RF MEMS capacitive switches. Both structures show a similar behavior with two bulk-controlled conduction mechanisms: space-charge-limited...
RF MEMS switches which utilize an insulating SiC microbridge as a structural layer have been developed. The MEMS switch with the 500 nm SiC microbridge exhibits good off-state performance but poor on-state characteristics due to the small on-state capacitance of the structure. However the mechanical reliability of the switch is exceptional. The MEMS switch with the 300 nm SiC thick microbridge has...
The discharging processes in silicon nitride dielectric film of RF-MEMS capacitive switches are investigated for the first time. The study includes the dependence of discharging as a function of temperature that allows the detection of thermally activated mechanisms. The discharging time constants were found to depend only on temperature and not on the actuation bias polarity.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.