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This paper describes the design of a novel tunable RF-MEMS capacitor that is fabricated in a 0.18 μm monolithically integrated RF-MEMS, 50 V LDMOS, 5 V CMOS technology. The novelty of the designs begins with the ability to use a single design for series or shunt capacitors and the ability to distribute the actuator plate around the capacitor in order to develop maximum capacitance. The capacitor structure...
A fully integrated power amplifier operating at switching and linear mode is implemented using 0.18-μm CMOS technology. To maximize performance for both operation modes, the fundamental load impedances are optimized with a variable capacitor for GSM and EDGE application. For GSM application, 32 dBm of the output power with 45 % of the drain efficiency is achieved at 1.76 GHz. With EDGE modulation...
This work presents a novel RF current-reused front-end with noise cancellation LNA and current-commutating mixer using 0.18 μm CMOS technology. The proposed design is applicable to a wideband receiver that converts a 0.5 - 5.5 GHz RF signal into a zero- or low-IF signal. A fully differential topology is adopted to suppress the even-order nonlinearity and common-mode noise. Additionally, the proposed...
A 2.4 GHz band high-efficiency RF rectifier and high sensitive DC voltage sensing circuit is implemented. A passive RF to DC rectifier of multiplier voltage type has no current consumption. This rectifier is using native threshold voltage diode-connected NMOS transistors to avoid the power loss due to the threshold voltage. It consumes only 900 nA with 1.5 V supply voltage adopting ultra low power...
Radio frequency (RF) circuit is having a rapid growth in wireless telecommunication. The increasing demand for higher quality and popularity of wireless services have urged the development of low cost multi-functional and reconfigurable RF front end modules fabricated from advanced device technologies. The RF front end is generally defined as everything between antenna and the intermediate frequency...
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