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The HEMT model in this article is applied by OMMIC D01PH. In this article we design a five circuit, the first two levels are designed for minimum noise and the last three for maximum gain design. The center frequency of this design is 35 GHz with 6 GHz bandwidth, gain is greater than 30dB and the noise figure is less than 3dB. This article describes a Ka-band low-noise amplifier design idea. In this...
In this work, the authors discuss the design of two low noise amplifiers (LNA) based on 1 μm gate-length pHEMT InP transistors and using two different topologies. Designed for radio astronomy applications, the first is a cascode circuit with a maximum gain of 15 dB and noise figure of 0.6 dB, while the second is a 2-stage cascaded amplifier with 27 dB of gain and 0.63 dB of noise figure. The two amplifiers...
This paper presents the design of 5.8 GHz front end low noise amplifier application for IEEE standard 802.11 systems for WLAN application. Revolution and demand of WLAN technology have urged development of low cost, low power and small size transceiver by using microstrip technology. This paper is present design and simulation of single stage LNA circuits. This paper is focusing on development of...
This paper presents 5-6 GHz front end Low Noise Amplifier application for IEEE standard 8021.1 g system for WLAN application. This amplifier uses FHX76LP Low noise SuperHEMT device designed for DBS application from Eudyna Device USA Inc. The paper present circuit design, simulation and measurement, including circuit analysis and verification of a Low Noise Amplifier (LNA) system at 5.75 - 5.85 GHz...
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