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This paper presents the design of a MMIC oscillator operating at a 45 GHz frequency. This circuit was fabricated by Alcatel-Thales III-V Lab with the new InP/GaAsSb/InP DHBT submicronic technology (We=700 nm). This transistor has a 15-μm-long two-finger emitter. The complete nonlinear modeling of heterojunction bipolar transistor used in this circuit is described. The interest of the methodology used...
This paper presents the design and the fabrication of a compact MIC 10 GHz single-transistor oscillator. It includes a packaged SiGe HBT (Infineon BFP740F) along with a low-Q coupled line resonator and only consumes 5 mA from a 3V power supply for an output power of -6 dBm. Its phase-noise has been measured at -117 dBc/Hz @100 kHz offset. Such performance is the result of a careful modeling process...
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