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The phase of virtual prototyping, which is usually based on a whole of numerical simulations of the system, requires today to have thin suitable models. These models must take in account the real behavior of the systems under various physical constraints (thermal, electromagnetic…). Particularly, in this work, we are interested to the study of the effect of the Mosfet transistor choice on the conducted...
This paper presents a circuit-based high-voltage p-channel metal-oxide-semiconductor (HV-PMOS) transistor model that includes a vertical parasitic p-n-p bipolar transistor and a procedure for extraction of its model parameters. HV-PMOS transistors are subjected to conducted radio frequency (RF) interference at the source pin by using the direct power-injection method. The results reveal complex behavior...
The concept of the measurement technique is to separate the paths by at least two directions; one is the current path, where the drain current flows, and the other is the non-current path, where the voltage is measured with the connection to the high-Z gate of the monitor circuit. The proposed measurement technique has been validated by HSPICE simulation.
In this paper, the standard compact MOSFET models, the BSIM4 and the PSP, are compared up to 40 GHz. Based on the measurement results, the DC, small signal and large signal performance of these models are studied. Although both of these models show good agreements with the measurement, for cases where the gate-source voltage is slightly larger than the threshold voltage, the BSIM4 model shows accurate...
In this paper, a new topology of the load network is introduced in the Class E power amplifier. The simple analysis and numeric results show that some improvements on output power, maximum utilizing frequency and device stress can be obtained by the new design method. Some simulations and experimental tests of this subclass are carried in contrast to the typical one. The design example uses an LDMOS...
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