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SEU is studied in a 90 nm SRAM cell with different simulation approaches. The SRAM cell main SEU parameters (maximum current peak, collected charge, threshold LET) are extracted and compared. It is shown that the simulation conditions have a direct impact on the cell behavior and so on the SEU prediction. Moreover, not accounting for voltage variations induced by the particle generation in the circuit...
Three-dimensional simulation is used to explore the new charge-collection mechanisms in highly-scaled MOSEFT. The results show the charge collection with the parasitic bipolar conduction can cause an increased SEU sensitivity. Then the problem of multiple-node upset in a 0.18 mum DICE cell is studied .The results show not only the transient floating node and charge lateral diffusion are the key reasons...
We present a practical, systematical method for the evaluation of the soft error rate (SER) of microelectronic devices. Existing methodologies, practices and tools are integrated in a common approach while highlighting the need for specific data or tools. The showcased method is particularly adapted for evaluating the SER of very complex microelectronic devices by engineers confronted to increasingly...
This paper presents an innovative structure based on 3 dimensional integration technology, where ultra thin inter layer dielectric enables a dynamic threshold voltage (VTH) control. A sequential process flow is proposed to fabricate 3D devices with dynamically tunable VTH. This ability can be exploited to design SRAMs cells with increased stability and surface density compared to planar technology...
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