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This paper presents the effects of a deep n-well junction on RF circuit performance based on a 0.35um SiGe technology. With a combination of measurement and field solver results, it shows that the deep n-well yields about 20 dB of isolation and eliminates the inter-block noise coupled through the substrate in certain degree. The isolation varies with different junction voltage and at different frequency...
This paper presents a CMOS receiver front-end for ultra-wideband (UWB) wireless applications within the 3.1-10.6 GHz band. Fabricated in a 0.13 um CMOS technology, the packaged and ESD-protected receiver integrates a broadband low-noise amplifier (LNA), a quadrature downconversion mixer, and local oscillator (LO) amplifiers. The LNA employs a noise-canceling technique to decouple input match from...
The emergence of digital mobile broadband communication systems for voice, data, multimedia and positioning is coupled to the continuous progress of silicon CMOS-technology. Single chip integration with digital part while maintaining excellent RF performance, high integration density, low power consumption and low cost under mass production aspects are the current system design challenges. This paper...
RF transceivers have recently migrated to low-cost digital deep-submicron CMOS processes, where their integration with baseband processors and memory serve to form low cost SoC solutions for various radio standards. Such process environment, optimized for digital logic and SRAM memory, is extremely restrictive for conventional analog and RF designs. This tutorial presents recently developed techniques...
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