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The increasing mask costs of modern scaled CMOS makes silicon area precious. Meanwhile, the lowering oxide thickness seriously toughens ESD protection of RF circuits, pushing towards area-demanding inductor-based ESD protection techniques. This paper presents a transformer-based ESD protection technique for inductor-based LNAs. With no area penalty, an ESD protection level of 4.5 kV HBM is achieved...
This paper describes 3.3 V silicon down conversion mixer with a current bleeding Gilbert multiplier and also compares the conventional current bleeding Gilbert mixer with an improved current bleeding circuit, detail analysis are given about the two circuits, using 0.35 um process. With a 1.675 GHz local oscillator (LO) and a 1.575 GHz RF input. The results show that the gain and IIP2 of the improved...
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