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This paper reports on recent progress on high-Q integrated micromechanical resonators using “CMOS-MEMS technology” to enable monolithic integration of MEMS and CMOS. Specifically, we take advantage of IC and semiconductor strength in Taiwan to develop several CMOS-MEMS resonator platforms targeted for inherent integration of MEMS and circuitry towards single-chip implementation for timing reference...
The basilar membrane and hair cells are the main parts of the mammalian cochlea, which converts external sound into bioelectrical signals, in the inner ear,. Loss of hair cells on the basilar membrane in the cochlea is one of the main causes of hearing loss. An artificial basilar membrane (ABM) was developed as a MEMS acoustic sensor using a piezoelectric beam array based on MEMS technology. The lengths...
Monolithic integration of CMUTs and CMOS electronics minimizes interconnect parasitics which is essential for low noise receiver design. Ideally the system noise should be dominated by the CMUT thermal-mechanical noise, which is shaped by CMUT electrical impedance. In addition to improved signal to noise ratio (SNR), a thermal mechanical noise limited detection system can be helpful to reveal information...
In this paper we use numerical predictions to show that a Salisbury screen absorber backed by a high impedance ground plane can be designed to give a −10 dB reflectivity bandwidth which exceeds 100% when operated at angles of incidence up to 40º. The structure consists of a periodic array of lossy dipoles which is sandwiched between the ground plane and the resistive screen. A major advantage of this...
Integrated CMOS-MEMS array resonators have been demonstrated that takes advantage of pull-in effect to surmount limitations of CMOS foundry process and attains electrode-to-resonator gap spacing at a deep-submicron range, leading to much smaller motional impedance compared to conventional CMOS-MEMS technologies, while possessing unique frequency tuning capability by modulating their mechanical boundary...
A 53 dB gain limiting amplifier for OC-192 and 10 GbE applications is developed in a 50 GHz fT SiGe SOI complimentary bipolar process, and has 5 mV pk-pk sensitivity, 1.25 V pk-pk maximum input signal, 14 ps (20/80%) rise/fall times and 450 mV pk-pk output into matched differential 50 Ohm loads, consuming 430 mW on a 3.3 V supply. Input Cherry-Hooper gain stages limit the -3 dB bandwidth to 11 GHz...
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