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A low-power digitally-controlled variable gain low noise amplifier is implemented in a 40-GHz fT 0.25 ??m BiCMOS process. Wideband input matching independent of the variable gain, as well as high reverse isolation are achieved thanks to a partial feedback technique. The variable gain is based on a resistor-chain gain-control technique, leading to fine gain steps and constant output impedance. It covers...
A comparison is made between a Silicon Germanium (SiGe) bipolar transistor LNA and a Silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) transistor Low Noise Amplifier (LNA), both operating at 2.1 GHz, a typical application being a Universal Mobile Telecommunications System (UMTS) cellular mobile phone. The designs are based on a simple common source (CS) amplifier design, and matched with...
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