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In this letter, we investigate the deembedding accuracy of open-short (OS) and pad-open-short (POS) deembedding for transistor measurement and modeling. It is found that all of the transistor intrinsic element values except for the gate-resistance, Rg , are independent of the deembedding procedure. Furthermore, the difference in Rg is dependent on the device size. To analyze the origin of the deembedding...
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