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Epitaxial Si 1-y C y and Si 1-x-y Ge x C y alloy layers are grown on monocrystalline silicon substrates by multiple energy ion implantation of Ge and C into single Si crystals followed by pulse excimer laser annealing. The properties of the alloy layers are determined precisely using spectroscopic ellipsometry (SE), X-ray diffraction...
In this work, Si 1-y C y and Si 1-x -y)Ge x C y alloy layers were grown by multiple energy ion implantation of Ge and C into single crystal Si followed by pulsed excimer laser induced epitaxy. The properties of the alloy layers obtained by this technique, in terms of film crystallinity, Ge and C redistribution and substitutional incorporation,...
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