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Resonant photoemission spectroscopy, with application of synchrotron radiation, was used to study of the valence band electronic structure of clean surface of the Si crystal doped with Gd and of these surface after deposition of 12 ML of Gd atoms. Fano-type resonant photoemission spectra corresponding to the Gd4d-4f transition were measured to determine the contribution of Gd4f electrons to the valence...
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