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ZnO nanowires were grown by catalyst-free metal-organic vapour-phase epitaxy on top of a p-type GaN buffer. The optical properties of the ZnO nanowires were investigated by temperature-dependent and time-resolved photoluminescence and compared to those of ZnO nanowires directly grown on sapphire. The luminescence intensity decrease with temperature of the nanowires grown on GaN reveals an original...
InGaN/GaN multiple quantum well (MQW) structures were grown by MOCVD. A strain-relief underlying layer was employed to reduce the strain in the InGaN well layers arising from the large lattice mismatch between InN and GaN. Samples were investigated by photoluminescence (PL), electroluminescence (EL) and atom force microscopy (AFM) to characterize their optical and morphological properties. By inserting...
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