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Optical properties of ZnO thin films with/without MgO-buffer annealing were investigated by low and room temperature photoluminescence measurements. The ZnO films were grown on c-sapphire substrates by plasma-assisted molecular-beam epitaxy employing a thin MgO-buffer layer. Dislocation density of ZnO layer was reduced from 5.3x10 9 to 1.9x10 9 cm -2 by annealing MgO-buffer...
A great improvement of optical quality was observed from a ZnCdSe/ZnSe/ZnMgSSe single quantum well separate-confinement heterostructure grown on GaAs substrate with ZnSe/ZnCdSe strained-layer superlattices (SLS) buffer layers by molecular beam epitaxy. Transmission electron microscopy images showed that a pitted surface was generally formed after the desorption of GaAs substrate in a II-VI chamber...
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