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Silicon carbonitride (SiCN) films were prepared by means of reactive magnetron sputtering of a sintered SiC target on n-type Si (1 0 0) substrates in the reactant gas of nitrogen, and then the films were respectively annealed at 600, 800 and 1100°C for 5min in nitrogen ambient. The films were characterized by energy dispersive spectrometer, X-ray diffraction, Fourier transform infrared spectroscopy...
SiCN films were synthesized by reactive sputtering of Si/C composite target in N 2 , and then annealed at 1200 °C for 30 min in several gases (argon, nitrogen, and hydrogen). Intensive photoluminescence peaks at 355 nm (3.49 eV) and 469 nm (2.64 eV) were found from the sample annealed in H 2 . Results of X-ray diffraction, transmission electron microscope, and energy dispersion spectroscopy...
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