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Using the concept developed previously on the temperature dependence of the radiative lifetime of confined excitons in low dimensional systems, we have investigated the ZnS/(ZnSe) n /ZnS single quantum well systems by picosecond optical measurement techniques. It is found that the radiative lifetime of the confined exciton in the 1 monolayer (ML) ZnSe system is independent of temperature below...
Growth of In 0.52 Al 0.48 As epilayers on InP(100) substrates by molecular beam epitaxy at a wide range of substrate temperatures (470-550 °C) and at arsenic beam equivalent pressures which are higher than previously reported, is carried out. A strong dependence of the photoluminescence (PL) and X-ray diffraction (XRD) linewidths and XRD intensity ratio...
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