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Nanodefects induced by nanoindentation on thin polystyrene (PS) films spin cast on silicon (Si) relax upon annealing at 110°C. The relaxation process for low molecular weight PS is interpreted in terms of a curvature driven flow which leads to the measurement of a diffusion coefficient. The latter is compared with the expected Rouse predictions using (i) bulk Tgbulk and (ii) surface Tgsurf glass transition...
The break up of a thin polystyrene (PS) film applied on silicon (Si) upon heating above the bulk glass transition temperature (T g ) of the polymer is studied using atomic force microscopy (AFM). In a 17-nm thick PS film rupturing occurs with the formation of indent-like surface disturbances pointing toward the Si substrate and leads to the standard nucleated dewetting process. Indent growth...
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