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We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500°C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050°C...
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