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The adsorption of dimethylcadmium (DMCd), dimethylzinc (DMZn) and trimethylgallium (TMGa) on GaAs(110) has been studied using TPD and XPS spectroscopies. In the first monolayer, the dimethyl species adsorb molecularly at 80 K, but, upon heating, undergo dissociation. Thermal elimination of the hydrocarbon fraction of these precursors is found to proceed mainly via the formation and desorption of TMGa...
The 2D-3D growth mode transition of compressively strained In x Ga 1-x As layers (x = 0.82 or 2% lattice mismatch) grown on an In 0.53 Ga 0.47 As buffer layer lattice matched to InP was studied using scanning tunneling microscopy. Up to 4 deposited monolayers, a layer by layer growth mode is maintained. The surface layer appears...
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