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Zinc oxide thin films are fabricated by controlled oxidation of sputtered zinc metal films on a hotplate in air at temperatures between 250 and 450 °C. The nanocrystalline films possess high relative densities and show preferential growth in (100) orientation. Integration in thin‐film transistors reveals moderate charge carrier mobilities as high as 0.2 cm2 V−1s−1. The semiconducting properties depend...
Detection of combined defect cluster sites in zinc oxide: Oxidation of plasma sputtered zinc generates zinc oxide films in which Doppler broadening positron annihilation spectroscopy (PAS) and positron annihilation life‐time studies (PALS) make it possible to detect oxygen vacancies (Vo) that are in close proximity to zinc vacancies (VZn). They form defect cluster sites acting as shallow acceptors...
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