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We have made for the first time electron spin resonance (ESR) measurements on Si(111)7x7 and Si(100)2x1 surfaces during the initial oxidation processes at room temperature. The present results clearly show that, at a very initial stage of oxidation of Si surfaces where only a few surface layers were oxidized, a variety of defects are formed that have not been seen in ex situ ESR studies of SiO ...
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