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The attention has been focused on the optical properties of structures of the form Au/MS/a-Si_{1-x}C_x:H/Si(100)/Al as a function of the deposition temperature of the a-Si_{1-x}C_x:H films. The amorphous SiC:H films were obtained for different temperatures ranging from 150°C up to 500°C. By photoluminescence, blue emission from all the structures was observed at room temperature and a high emission...
A study of the photoluminescence properties of AlInN/GaN in comparison with the spectrum of the GaN active layer of the same heterostructure is presented. The strong intensity lines of the observed photoluminescence spectra are associated with the formation, enhancement and narrowing of the excitonic lines in the flat band region of the active GaN layer. The phenomena in the presence of electric field...
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