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Experimental results show that Cs adsorbs preferentially on the threefold hollow (H3) and threefold filled (T4 sites of the Si(111)7 × 7 reconstructed surface. Following our recent calculations, adsorption of Ge on H3 or T4 sites of Si(111)7 × 7 is unfavourable. We present a comparative study of various adsoption mechanisms for Ge and Cs on Si(111)7 × 7, in the framework of the crystalline extension...
Experimental results show that Cs adsorbs preferentially on the threefold hollow (H3) and threefold filled (T4 sites of the Si(111)7 × 7 reconstructed surface. Following our recent calculations, adsorption of Ge on H3 or T4 sites of Si(111)7 × 7 is unfavourable. We present a comparative study of various adsoption mechanisms for Ge and Cs on Si(111)7 × 7, in the framework of the crystalline extension...
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