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The objective of this paper is experimental studies of the linear absorption coefficient, or mean penetration depth of positrons emitted from ^{22}Na isotope in different materials. For this purpose we constructed a new experimental setup which allows us to scan the depth implantation profile of positrons. For the studied metals: Mg, Al, the obtained values of mean penetration depth coincide well...
Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8μm thick low temperature MBE GaMnAs layers with Mn content 0.5--5% and different As_2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration...
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