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Pulsed laser interference is applied to metallic and semiconductor thin films in the thickness range of 40-100 nm. At intensities which induce local melting we observe local retraction of the molten material towards the unmolten areas due to dewetting. Thus micropatterning of surface gets feasible. Although this dewetting induced retraction should be a common behaviour of metals on oxide surfaces,...
Direct laser interference lithography is a new and low cost technique which can generate the line- or dot-like periodic patterns over large areas. In the present work, we report on direct fabrication of micrometer structures on Si surface. In the experiments the pulsed high power Nd:YAG laser operating at 1064 nm wavelength was used. Two-beam configuration with an angle of incidence of 40° was employed...
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