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Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously...
In this paper we perform a detailed study of the transport of hot electrons in the double barrier heterostructures with the presence of a collector barrier. This system is considered as a double barrier resonant tunneling device. The electron is described by time-dependent Schrodinger equation, which allows us to study detailed dynamics of the carriers. The influence of an energy step in the collector...
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