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The interfacial and electrical properties of HfO2 (5nm) and Al2O3 (3nm)/HfO2 (5nm) high-k deposited on nitride passivated Ge (100) have been investigated. The XPS spectroscopy and HRTEM were used to study the chemical and interfacial properties of deposited thin films. The stack with only HfO2 shows the suppressed electrical properties such as high value of EOT and density of interface traps. The...
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