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Nanocrystalline Si (nc-Si) on p-type Si substrate has been fabricated by pulsed laser deposition (PLD) technique using a Nd:YAG laser with different wavelengths of 355, 532, and 1064 nm. Basal pressure was maintained at 1x10 -5 Torr. Si nanocrystalline thin films are fabricated in 1-3 Torr He ambient. After deposition, nc-Si has been annealed in N 2 gas. Strong violet-indigo luminescence...
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