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High-quality In0.3Ga0.7As films have been epitaxially grown on Si (111) substrate by inserting an InxGa1−xAs interlayer with various In compositions by molecular beam epitaxy. The effect of InxGa1−xAs interlayer on the surface morphology and structural properties of In0.3Ga0.7As films is studied in detail. It reveals that In0.3Ga0.7As films grown at appropriate In composition in InxGa1−xAs interlayer...
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