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Silicidation of Ni ultra-thin films on Si(001) substrates was investigated from room temperature to 500°C. In situ X-ray diffraction (XRD) experiments were performed to follow the reaction evolution. Transmission electron microscopy (TEM) and atomic probe tomography (APT) analyses highlight the formation of NiSi at low temperature (200°C). A peculiar phase sequence is evidenced for the thinnest deposited...
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