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We have created arrays of step-free regions on Si(111) and Si(001) starting with fabricated square ridge structures and using high-temperature annealing. The conditions for the formation of step-free regions are different on the two surfaces due to differences in the temperature dependences of the surface structures and different diffusion characteristics. The step-free regions are unstable against...
The Si(111) surface shows a first-order phase transition to the so-called ''1 x 1'' phase above T c from the (7 x 7) phase. In the (1 x 1) phase, the surface atomic structure and the atomic dynamics were investigated by using empirical Tersoff-Dodson interatomic potential. From the calculation of the surface potential map of a Si adatom, both the surface diffusion coefficient and the evaporation...
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