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In this study, employing a high-density, low-temperature SiH 4 –H 2 mixture microwave plasma, we investigate the influence of source gas supply configuration on deposition rate and structural properties of microcrystalline silicon (μc-Si) films, and demonstrate the plasma parameters for fast deposition of highly crystallized μc-Si films with low defect density. A fast deposition rate...
Thin films of molybdenum, tungsten and mixed MoO 3 -WO 3 oxides obtained by atmospheric pressure chemical vapor deposition (APCVD) are investigated by applying Raman and XRD measurements. All the films were prepared by identical technological parameters and were annealed at 400 °C. Analysis of the Raman and XRD spectra of the three types of films shows that molybdenum oxide films crystallize...
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