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ZnS, a wide energy band gap semiconductor, is the potential candidates as a buffer layer for solar cells application. Here, ZnS and Al-substituted ZnS were prepared by simply chemical synthetic route with various high concentration of Al dopant from 0at% to 40at%. The structures of ZnS and Al-substituted ZnS powder are all in cubic zinc blende phase. Interestingly, the crystallite size slightly decreases...
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