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Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd2O3 are investigated by means of different thermal cycles and storage tests up to 500°C for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd2O3 dielectric layer have lower leakage current and a more stable behavior...
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