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Since the lattice constant of silicon-carbon (Si:C) is smaller than that of Si, Si:C embedded in the source and drain (e-Si:C S/D) can induce tensile stress in the channel and improve the electron mobility of n-metal-oxide-semiconductor field-effect transistors (nMOSFETs). In this research, C ion cryo implantation and a metastable recrystallization schemes employed to achieve strained Si:C layers...
We investigated molecular carbon (C16H10) implant as a replacement for both a monomer carbon co-implant as well as a Ge pre-amorphization step for ultra-shallow junction (USJ) formation in a p-MOSFET SDE doping process in a 40 nm logic device. Carbon is often used in the p-FET extension sequence because it reduces transient enhanced diffusion (TED) by trapping silicon interstitials. However, a Ge...
Solid phase epitaxial regrowth (SPER) has been re-evaluated using molecular boron implantation techniques (B18H22) for the purpose of source/drain extensions as well as for the NFET's halo implants. It had been found that reverse annealing can be omitted. The well documented benefits of fast ramp spike temperature profiles allow the use of highly activating anneals above 800degC without significant...
The heterojunction field effect transistor (HFET) is demonstrated for the first time in InAlAs/InGaAs/InAlGaAs/InP material system using molecular beam epitaxy (MBE). A tungsten gate selfaligned HFET structure was made by ion imitation and rapid thermal annealing. The 1.0 mu m self-aligned gate HFET exhibited room temperature transconductance of 490 mS/mm with cutoff frequency of 9 GHz.<<ETX>>
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